We report measurements and modeling of silicon carbide (SiC) based ultraviolet photodetectors for the detection of light in the mid-to-short ultraviolet range where SiC’s absorption coefficients are high and the corresponding penetration depths are low. These large absorption coefficients result in increased susceptibility of photo-generated electron and holes to surface recombination and therefore give rise to lower quantum efficiencies. To increase responsivity and extend the detection capability of these photodetectors to short ultraviolet wavelengths (or UVC), we measure an existing silicon carbide avalanche photodiode (APD) designed and fabricated for 280 nm operation by General Electric Global Research Center, and then develop models and techniques to increase their operation range to lower UV wavelengths. The measurements aid the development and calibration of a silicon carbide modeling and design suite that is currently being used to assist the design of a new silicon carbide APD for UVC detection. Here the design considerations require low operating voltages, low noise, low dark count rate and high responsivity. We plan to satisfy design criteria by engineering thickness and doping of stacked layers as well as by designing an APD surface that gives rise to minimal recombination of electrons and holes generated by the incident light.