Measuring and modeling macrophage proliferation in a lab-on-CMOS capacitance sensing microsystem

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Smith K, Lin C-Y, Gilpin Y, Wayne E and Dandin M (2023) Measuring and modeling macrophage proliferation in a lab-on-CMOS capacitance sensing microsystem.

True Random Number Generation Using Dark Noise Modulation of a Single-Photon Avalanche Diode

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M. S. Sajal and M. Dandin, “True Random Number Generation Using Dark Noise Modulation of a Single-Photon Avalanche Diode,” in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 71, no. 3, pp. 1586-1590, March 2024

Correlation of Capacitance and Microscopy

Correlation of capacitance and microscopy measurements using image processing for a lab-on-CMOS microsystem

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B. Senevirathna, S. Lu, M. Dandin, E. Smela, and P. Abshire, “Correlation of capacitance and microscopy measurements using image processing for a lab-on-CMOS microsystem,” IEEE Trans. Biomed. Circuits Syst., Sep. 2019.

High Resolution Monitoring of Chemotherapeutic Agent Potency

High resolution monitoring of chemotherapeutic agent potency in cancer cells using a CMOS capacitance biosensor

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B. Senevirathna, S. Lu, M. Dandin, J. Basile, E. Smela, and P. Abshire, “High resolution monitoring of chemotherapeutic agent potency in cancer cells using a CMOS capacitance biosensor,” Biosensors and Bioelectronics, vol. 142, p. 111501, Oct. 2019.

Real-time measurements of cell proliferation

Real-time measurements of cell proliferation using a lab-on-CMOS capacitance sensor array

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B. Senevirathna, S. Lu, M. Dandin, J. Basile, E. Smela, and P. Abshire, “Real-time measurements of cell proliferation using a lab-on-CMOS capacitance sensor array,” IEEE Trans. Biomed. Circuits Syst., vol. 12, no. 3, pp. 510–520, Jun. 2018.

Characterization image

Characterization of single-photon avalanche diodes in a 0.5 μm standard CMOS process—Part 2: Equivalent circuit model and Geiger mode readout

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M. Dandin, M. Habib, B. Nouri, P. Abshire, and N. McFarlane, “Characterization of single-photon avalanche diodes in a 0.5 μm standard CMOS process—Part 2: Equivalent circuit model and Geiger mode readout,” IEEE Sens. J., vol. 16, no. 9, pp. 3075–3083, May 2016.

Polymer filters for ultraviolet-excited integrated fluorescence sensing

Polymer filters for ultraviolet-excited integrated fluorescence sensing

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M. Dandin, P. Abshire, and E. Smela, “Polymer filters for ultraviolet-excited integrated fluorescence sensing,” J. Micromechanics Microengineering, vol. 22, no. 9, p. 095018, Sep. 2012.

High signal-to-noise ratio avalanche photodiodes with perimeter field gate and active readout

High signal-to-noise ratio avalanche photodiodes with perimeter field gate and active readout

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M. Dandin and P. Abshire, “High signal-to-noise ratio avalanche photodiodes with perimeter field gate and active readout,” IEEE Electron Device Lett., vol. 33, no. 4, pp. 570–572, Apr. 2012.

Silicon Carbide ultraviolet photodetector modeling, design and experiments

Silicon Carbide ultraviolet photodetector modeling, design and experiments

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A. Akturk, M. Dandin, A. Vert, S. Soloviev, P. Sandvik, S. Potbhare, N. Goldsman, and P. Abshire, “Silicon Carbide ultraviolet photodetector modeling, design and experiments,” Mater. Sci. Forum, vols. 717-720, pp. 1199-1202, May 2012.

Characterization of single-photon avalanche diodes in a 0.5 μm standard CMOS process—Part 1 (1)

Characterization of single-photon avalanche diodes in a 0.5 μm standard CMOS process—Part 1: Perimeter breakdown suppression

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M. Dandin, A. Akturk, B. Nouri, N. Goldsman, and P. Abshire, “Characterization of single-photon avalanche diodes in a 0.5 μm standard CMOS process—Part 1: Perimeter breakdown suppression,” IEEE Sens. J., vol. 10, no. 11, pp. 1682 – 1690, Nov. 2010.